Lateral bipolar transistor for integrated circuits and method for forming the same

摘要

An integrated circuit and method for forming the same including a lateral bipolar transistor having an increased current gain. Floating islands are formed in the emitter of the lateral transistor to have a conductivity type opposite that of the emitter and which act to channel current towards the periphery of the emitter, thereby directing the current towards the collector region. In addition, the integrated circuit includes a buried layer underlying the lateral transistor with the buried layer pinched very thin along a region which outlines the edge of the emitter for enhancing lateral current flow.