Magnetic bubble memories with nonobstructing crossings between conductor and permalloy patterns

摘要

A field-access magnetic bubble memory employs both a pattern of magnetic elements to define paths along which bubbles move in reponse to a magnetic field reorienting in the plane of bubble movement and electrical conductors which, inter alia, control bubble movement between paths. The crossings between the pattern of conductors and the pattern of magnetic elements have been found to be only negligibly disruptive of bubble movement if the conductors are carefully oriented with respect to the magnetic elements.