发明名称 |
HALFTONE PHASE SHIFT MASK BLANK AND HALFTONE PHASE SHIFT MASK |
摘要 |
A halftone phase shift mask blank is provided comprising a transparent substrate and a halftone phase shift film which is composed of a silicon base material having a Si+N+O content of at least 90 at %, a Si content of 30-70 at %, a N+O content of 30-60 at %, and an O content of up to 30 at %, and has a thickness of up to 70 nm. The halftone phase shift film is thin enough for mask pattern processing, undergoes minimal pattern size variation degradation upon exposure to sub-200 nm radiation, and maintains a necessary phase shift and transmittance. |
申请公布号 |
US2016291452(A1) |
申请公布日期 |
2016.10.06 |
申请号 |
US201615077258 |
申请日期 |
2016.03.22 |
申请人 |
Shin-Etsu Chemical Co., Ltd. |
发明人 |
SASAMOTO Kouhei;KOSAKA Takuro;INAZUKI Yukio;KANEKO Hideo |
分类号 |
G03F1/32 |
主分类号 |
G03F1/32 |
代理机构 |
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代理人 |
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主权项 |
1. A halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film thereon having a phase shift of 150° to 200° and a transmittance of 3% to 30% with respect to light of wavelength up to 200 nm, wherein
said halftone phase shift film is a single layer or a multilayer film, each layer comprising essentially silicon and nitrogen and optionally oxygen, when the halftone phase shift film is a single layer, the overall single layer is composed of a silicon base material, or when the halftone phase shift film is a multilayer film, at least 60% of its thickness is composed of a silicon base material, said silicon base material having a total content of silicon, nitrogen and oxygen of at least 90 at %, a silicon content of 30 to 70 at %, a total content of nitrogen and oxygen of 30 to 60 at %, an oxygen content of up to 30 at %, and a transition metal content of up to 1 at %, and said halftone phase shift film has a thickness of up to 70 nm. |
地址 |
Tokyo JP |