发明名称 LIGHT-EMITTING ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a light-emitting element whose thickness can be increased easily and which can operate at low driving voltage by novel means which is different from prior art, and a light-emitting element with low power consumption and high color purity, and a light-emitting element with low power consumption and high yield.SOLUTION: A light-emitting element has a structure in which a first layer 102, a second layer 103, and a third layer 104 containing a light-emitting material are provided between an anode 101 and a cathode 105 in this order in a direction from the anode 101 to the cathode 105. The third layer 104 is in contact with the cathode 105. The second layer 103 is formed using an n-type semiconductor or a mixture containing the n-type semiconductor, or a mixture containing an organic compound with a carrier transporting property and a material with a high electron donating property. The third layer 104 is formed using a p-type semiconductor or a mixture containing the p-type semiconductor, or a mixture containing an organic compound with a carrier transporting property and a material with a high electron accepting property.SELECTED DRAWING: None
申请公布号 JP2016184769(A) 申请公布日期 2016.10.20
申请号 JP20160146890 申请日期 2016.07.27
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 KUMAKI DAISUKE;SEO TETSUSHI
分类号 H01L51/50;H01L51/52;H05B33/14;H05B33/22 主分类号 H01L51/50
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