HEAT TREATMENT METHOD FOR 335 GROUP COMPOUND SEMICONDUCTOR,申请号JP19780011605-传众专利搜索

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发明名称	HEAT TREATMENT METHOD FOR 335 GROUP COMPOUND SEMICONDUCTOR
摘要
申请公布号	JPS54104770(A)	申请公布日期	1979.08.17
申请号	JP19780011605	申请日期	1978.02.03
申请人	SONY CORP	发明人	KASAHARA JIROU
分类号	H01L21/265;C30B29/40;C30B31/06;H01L21/22;H01L21/324	主分类号	H01L21/265
代理机构		代理人
主权项
地址

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