发明名称 |
Bubble memory optimization by adjusting properties of quartz film |
摘要 |
A bubble memory device and method of fabrication are disclosed which establish that there is a correlation between bubble memory performance and the properties of a quartz film, which is interposed between the bubble film and metallic overlays, namely, the permalloy and/or conductor layers of the device. Specifically, it has been established that there is a correlation between improved device performance and a low p-etch rate which is a measurement that establishes certain elastic constants of the quartz (i.e., the response of the device to stress).
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申请公布号 |
US4272347(A) |
申请公布日期 |
1981.06.09 |
申请号 |
US19770839699 |
申请日期 |
1977.10.05 |
申请人 |
SPERRY CORPORATION |
发明人 |
CASEY, MARTIN J.;STEIN, BARRY F.;WETTERSKOG, HERMAN E. |
分类号 |
H01F10/30;H01F41/34;(IPC1-7):C23C15/00 |
主分类号 |
H01F10/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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