Method for producing semiconductor device

摘要

A method for producing a semiconductor device includes laser welding to bond an upper terminal and a lower terminal as internal wiring members of the semiconductor device. When the upper terminal is fixed to the lower terminal by the laser welding, a gap between an upper surface of the lower terminal and a lower surface of the upper terminal is equal to or more than 20 μm and equal to or less than 400 μm.

主权项

1. A method for producing a semiconductor device, comprising:
forming a step portion on a rear surface of an upper terminal, close contacting the rear surface of the upper terminal where the step portion is not formed, to an upper surface of a lower terminal to thereby set a gap at the step portion between the upper surface of the lower terminal and the rear surface of the upper terminal to equal to or more than 20 μm and equal to or less than 400 μm, said gap being laterally open between the lower terminal and the upper terminal without being closed, said lower and upper terminals being internal wiring members of the semiconductor device, and radiating a laser beam to a surface of the upper terminal immediately above the step portion to laser-weld the upper terminal directly to the lower terminal while keeping the gap between the upper terminal and the lower terminal.