Double lambda diode memory cell.

摘要

Disclosed is an improved static memory cell comprised of first and second conductive means for carrying respective bias voltages in the cell, a third conductive means for carrying an inpuvoutput voltage signal in the cell, and a Lambda diode coupled between the first and third conductive means for there providing a negative dynamic resistance whenever the input/output voltage signal is within a predetermined range between the bias voltages on the first and second conductive means, with the improvement being a voltage dependent resistance means coupled between the second and third conductive means for there providing a negative dynamic resistance in response to at least some of the input/output voltages within said range.