| 发明名称 |
USE OF AN AMORPHOUS ALLOY OF SILICON AND GERMANIUM AS AGAINST GALLIUM-ARSENIDE LASER RADIATION SENSITIVE PHOTOCONDUCTOR |
| 摘要 |
<p>An improved photoconductor for GaAs laser addressed devices sensitive to illumination at about 1.5 eV is an amorphous material containing silicon, hydrogen and a material taken from the group consisting of Ge, Sn and Pb. A preferred embodiment of this invention is amorphous SixGe1-xHy where x equals 0.78 to 0.93 and y equals 14-20 atomic percent.</p> |
| 申请公布号 |
EP0003237(B1) |
申请公布日期 |
1983.05.18 |
| 申请号 |
EP19780101834 |
申请日期 |
1978.12.23 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEVALLIER, JACQUES PAUL;GUARNIERI, CHARLES RICHARD;ONTON, AARE;WIEDER, HAROLD |
| 分类号 |
G03G5/08;H01L31/0248;H01L31/0376;H01L31/09;H01L31/20;H01S5/00;(IPC1-7):01L31/02;22C29/00 |
主分类号 |
G03G5/08 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
