| 摘要 |
PURPOSE:To prevent the generation of ND, and to utilize an IG effect by executing a high-temperature heat treatment process prior to a low-temperature heat treatment process. CONSTITUTION:A silicon (Si) substrate is thermally treated for 9hr at 1,200 deg.C or more such as 1,200 deg.C in a nitrogen (N2) atmosphere as a first process, it is thermally treated for three of 24hr, 48hr and 96hr at a temperature of 600-800 deg.C such as 700 deg.C in the same nitrogen (N2) atmosphere as a second process, and it is thermally treated for 4hr at a temperature of 900-1,100 deg.C such as 1,050 deg.C in a dried oxygen (O2) atmosphere as a third process to each heat treatment. Accordingly, the resistivity of the silicon (Si) substrate does not change, and the non-defect layer of the surface of the silicon (Si) substrate is formed by ''thetam'' or more, and does not change even in succeeding manufacturing processes. The quantity of ND generated is sight within a range of approximately 24hr or 70hr of a heat treatment process in a low-temperature process at 700 deg.C, and an extremely remarkable donor generation inhibiting effect is displayed. |
