| 发明名称 |
A method of manufacturing a semiconductor device comprising an interconnection layer. |
| 摘要 |
<p>A method of manufacturing a semiconductor device which comprises the steps of forming an interconnection layer (409) through an insulating film (402) on a semiconductor substrate (401), and connecting the diffusion interconnection region (408c) in the surface portion of said substrate (401) to said interconnection layer (409) by growing a metal or metal semiconductor compound (414) on the surface of said substrate (401) and the interconnection layer (409).</p> |
| 申请公布号 |
EP0091775(A2) |
申请公布日期 |
1983.10.19 |
| 申请号 |
EP19830301920 |
申请日期 |
1983.04.06 |
| 申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
SHIBATA, TADASHI |
| 分类号 |
H01L21/8234;H01L21/28;H01L21/3205;H01L21/768;H01L23/522;H01L23/532;H01L23/535;H01L27/088;(IPC1-7):01L21/90;01L23/52 |
主分类号 |
H01L21/8234 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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