| 摘要 |
PURPOSE:To provide a semiconductor integrated circuit device which is highly resistive to alpha rays and assures high speed operation if it is reduced in size by forming the P type and N type diffused layers almost symmetrically in the impurity concentration about the P-N junction, giving impurity concentration of specified atoms/cm<3> to the area in the vicinity of junction area and by surrounding the junction area with an insulating film. CONSTITUTION:An aperture is opened on an oxide film formed on a region 3', the N type impurity is diffused until it reaches the buried layer 2 and thereby a collector diffusion layer 5 and then a base region 6 are formed sequentially. Thereafter, the photo resist film is formed on the substrate except for the diode forming region 3' in order to use it as the mask ion implantation. Thereafter, the P type impurity, boron, is implanted in a high concentration to the region 3'' and it is placed in contact with the N<+> type buried layer. Thereby, the P-N junction 12 of diode can be formed. At this time, the ion injection is performed through the N type impurity buried layer and P-N junction under the condition that the concentration is 10<16> atoms/cm<3> and impurity gradient becomes symmetrical. Thereafter, the photo resist is removed, the N type emitter region 9 is formed and then, the electrodes 10, 10', 10'', 10''' of the collector, base, emitter and diode are formed. |
