| 摘要 |
PURPOSE:To make it possible to perform high speed current amplification operation, by sequentially bonding a reverse conductive type semiconductor layer, which is sufficiently thin so as to form a depletion layer, and a one conductive type semiconductor layer on a one conductive semiconductor, which forms an emitter, providing a base layer having a double layered structure in this way, thereby improving the high frequency characteristis. CONSTITUTION:A negative voltage is applied to an emitter electrode 12 having an ohmic jnnction. A positive voltage is applied to a collector electrode 18 having a Schottky junction. A signal, whose positive potential is slightly higher than the emitter potential, is applied to a base electrode 17 having an ohmic junction. Then, the height of the potential barrier in a base layer for a P<+> Al0.3Ga0.7As layer 14 and an N<+> GaAs layer 15 is lowered, and electrons are injected from the emitter side. The electrons, which are injected into the sufficiently thin P<+> Al0.3Ga0.7As layer 14 such as about 150Angstrom , are tunneled through said P<+> Al0.3 Ga0.7As layer 14 at fairly large probability. The electrons pass through the sufficiently thin N<+> GaAs layer 15 such as about 200Angstrom and flow into the collector electrode 18 having the Schottky junction. |
