发明名称 |
CHARGE STORAGE TYPE SEMICONDUCTOR DEVICE |
摘要 |
A charge storage type semiconductor device comprising a semiconductor substrate and means for accumulating charge in those portions of the substrate which are located in the vicinity of one of the major surfaces of the substrate. The substrate has a defect region of a high defect density and at least one defect free region having no crystal defects or a low defect density and formed in the vicinity of at least the major surface of the substrate. The defect region prevents unnecessary minority carriers from flowing into charge storage regions. |
申请公布号 |
DE3067750(D1) |
申请公布日期 |
1984.06.14 |
申请号 |
DE19803067750 |
申请日期 |
1980.07.18 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
SEKINE, HIROKAZU;MORIMUNE, KATUHIKO;WATANABE, MASAHARU;SUZUKI, NOBUO |
分类号 |
H01L21/324;H01L27/108;H01L27/148;H01L29/10;H01L29/32;H01L29/768 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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