发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
A technical idea of the present invention provides a semiconductor device with excellent operation performance, and a manufacturing method thereof. The semiconductor device comprises: a semiconductor substrate; at least one first gate structure with a flat upper surface formed on the semiconductor substrate, extended in a first direction, and having a first width in a direction perpendicular to the first direction; and at least one second gate structure with a convex upper surface formed on the semiconductor substrate, extended in a second direction, and having a second width greater than the first width in a direction perpendicular to the second direction. |
申请公布号 |
KR20160111725(A) |
申请公布日期 |
2016.09.27 |
申请号 |
KR20150036761 |
申请日期 |
2015.03.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, JU YOUN;KANG, SANG JUNG;AN, JI HWAN |
分类号 |
H01L29/49;H01L29/423;H01L29/745 |
主分类号 |
H01L29/49 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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