发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 A technical idea of the present invention provides a semiconductor device with excellent operation performance, and a manufacturing method thereof. The semiconductor device comprises: a semiconductor substrate; at least one first gate structure with a flat upper surface formed on the semiconductor substrate, extended in a first direction, and having a first width in a direction perpendicular to the first direction; and at least one second gate structure with a convex upper surface formed on the semiconductor substrate, extended in a second direction, and having a second width greater than the first width in a direction perpendicular to the second direction.
申请公布号 KR20160111725(A) 申请公布日期 2016.09.27
申请号 KR20150036761 申请日期 2015.03.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, JU YOUN;KANG, SANG JUNG;AN, JI HWAN
分类号 H01L29/49;H01L29/423;H01L29/745 主分类号 H01L29/49
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