| 摘要 |
PURPOSE:To improve the reliability of an IC by connecting the second wiring layer through a plurality of connecting holes having a diameter of twice or less of the thickness of the second wiring layer to the first wiring layer, thereby forming an electrode wiring structure without anxiety of disconnection. CONSTITUTION:An aluminum electrode 3 of the first layer is formed on an N type region 2 on a P type semiconductor substrate 1, a PSG film 4 is covered, an electrode connecting window 7 is opened, and aluminum wirings 6 of the second layer are formed. A plurality of electrode connecting windows 7 having the same area as an electrode connecting window are formed without altering the current capacity of the wirings 6. When the aluminum is covered by a covering method having good step coverage, the windows 7 are completely buried to eliminate a recess in the window, and the discontinuous wire of the aluminum film can be eliminated by high temperature melt. The number of the windows is decided by calculating the thickness of the wiring film and the area of the windows. |
