发明名称 |
Static load for high voltage driver |
摘要 |
A static load for a high voltage driver includes first and second depletion mode field effect transistors and a diode-connected enhancement mode field effect transistor. The static load is arranged with a switching transistor to form a high voltage driver circuit. When the output of the driver circuit is at a relatively low potential, current drawn from the high voltage power supply is substantially reduced by applying a source to gate potential through the diode-connected transistor to one of the depletion mode transistors below the threshold voltage of the depletion mode transistor.
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申请公布号 |
US4496853(A) |
申请公布日期 |
1985.01.29 |
申请号 |
US19820440109 |
申请日期 |
1982.11.08 |
申请人 |
GENERAL INSTRUMENT CORPORATION |
发明人 |
STREIBER, RONALD W. |
分类号 |
H03K19/0944;(IPC1-7):H03K3/01;H03K17/687 |
主分类号 |
H03K19/0944 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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