| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate for crystal growth which can be produced with low melting point and on which vapor phase growing such as epitaxial growing of gallium nitride can be preferably performed, and to provide a light- emitting device using this substrate. SOLUTION: This substrate for crystal growth for vapor phase growing of a single crystal essentially comprising gallium nitride essentially consists of a spinel single crystal having one or more kinds of chemical compsns. of Mg2 TiO4 , MnTiO4 , Co2 TiO4 and Zn2 TiO4 . The light-emitting device LD is obtd. by depositing a laser element comprising at least a single crystal layer essentially comprising gallium nitride on the substrate. |
