| 摘要 |
PURPOSE:To produce wiring with pattern width subject to no dispersion by a method wherein, when a wiring pattern is formed on a lower layer substrate through the intermediary of an interlayer insulating film, overall surface of the substrate is coated with the interlayer insulating film to provide a recession corresponding to the wiring pattern and after coating the overall surface with an electrode wiring metallic film while filling the recession, the metallic film excluding that buried in the recession is removed by etching process. CONSTITUTION:A lower layer substrate 1 is coated with an interlayer insulating film 2 such as SiO2, Si3N4 etc. to provide a resin film 6 with an opening 7 corresponding to the diameter and shape of a specified electrode wiring pattern 9a on the film 2. Next a recession 8 with around half depth of the thickness of pattern 9a is formed in the film 2 by etching process utilizing the film 6 as a mask and then the film 6 is removed and overall surface is coated with an Al film 9 while filling the recession 8. Later a resin mask 10a is provided on the film 9 corresponding to the recession 8 and exposed film 9 is removed by etching process utilizing the mask 10a to leave a specified electrode metallic wiring pattern 9a half-buried in the recession 8 removing the mask 10a. |
