发明名称 DETECTING METHOD OF BONDED STATE IN DIE BONDING
摘要 PURPOSE:To detect the quality of die bonding by a non-contact and non-destructive method accurately, by performing the die bonding of a part on a substrate, measuring the wavelength of infrared rays, which are emitted from the surface of the part, and detecting the presence or absence of a high temperature region at the specified position of the part. CONSTITUTION:A chip 4 is die-bonded on a substrate 1. Then, the distribution of the infrared rays, which are emitted from the surface of the chipe 4, is measured by using an infrared-ray receiving device 5 on a heater block 2. The radiation heat, which is measured by the infrared-ray receiving device 5, is analyzed by a wavelength analyzing circuit 10. The wavelength of the most intense infrared rays in the radiation heat is detected by a main wavelength detecting circuit 11. The main wavelength is converted into an electric signal by a data processing circuit 12. The signal is displayed on a display 13 or compared with the output of a comparing circuit 14 having the temperature pattern of a good product. Thus the quality of the die bonding is judged. Therefore, the bonded state in the die bonding can be instantly and accurately judged by a non-contact and non- destructive method.
申请公布号 JPS60169742(A) 申请公布日期 1985.09.03
申请号 JP19840024675 申请日期 1984.02.13
申请人 SHINKAWA:KK 发明人 SHIMODA YASUO
分类号 G01J5/00;G01N21/88;G01N21/93;G01N21/956;G01N25/72 主分类号 G01J5/00
代理机构 代理人
主权项
地址