| 摘要 |
PURPOSE:To effectively form practical positioning marks by a method wherein aligning patterns made of heavy metal or any material containing heavy metal are formed on a tapered base the side wall of which meets a substrate at the angles within a specified range of values. CONSTITUTION:A silicon dioxide film 102 for protecting semiconductor substrate is deposited on a semiconductor substrate 101 and a thick film 103 such as polysilicon film, nitride film etc. forming positioning mark bases is deposited on the film 102 to form resist patterns 104 as positioning mark bases. The edge angle of base shall be within the range of 30 deg.-70 deg. measured from the substrate surface. Resist patterns 301 with cross type resist removing parts are formed on the base by lithographical process and after depositing heavy metal such as Au, Pt, Mo, W etc. overall surface is immersed in resist removing solution leaving desired patterns 401 only. Through these procedures, excellent detecting precision may be acquired assuring effective positioning results. |
