| 摘要 |
PURPOSE:To obtain a MESFET provided with a gate with its width designed to the submicron order by a method wherein a hole is provided, for a gate electrode, to be narrowed by an insulating film laid in the vicinity thereof. CONSTITUTION:An insulating film 5 is formed on a GaAs substrate 1 provided with an N<-> type channel region 2, N<+> type source region 3 and drain region 4 and, in the insulating film 5, contact holes 6, 7 for a source, drain are formed. Next, on the GaAs substrate 1, a conductive layer typically of Al is deposited by evaporation. The Al conductive layer is then subjected to patterning for the building of a source electrode 8 and drain electrode 9 respectively to contact the source region 3 and drain region 4. The electrodes 8, 9 are coated with an insulating film 10. In the insulating film 10, at a portion designed for a gate electrode, a hole 11 is provided reaching the surface of the GaAs substrate 1. Another insulating film 12 is formed, which is to be removed by a quantity equivalent to its thickness by a directional etching technique, for example, by reactive ion etching. |
