SEMICONDUCTOR DEVICES HAVING MULTIPLE GATE STRUCTURES AND METHODS OF MANUFACTURING SUCH DEVICES

摘要

A semiconductor device includes a substrate having a first region and a second region, a plurality of first gate structures in the first region, the first gate structures being spaced apart from each other by a first distance, a plurality of second gate structures in the second region, the second gate structures being spaced apart from each other by a second distance, a first spacer on sidewalls of the first gate structures, a dielectric layer on the first spacer, a second spacer on sidewalls of the second gate structures, and a third spacer on the second spacer.

主权项

1. A semiconductor device, comprising:
a substrate having a first region and a second region; a plurality of first gate structures in the first region, the first gate structures being spaced apart from each other by a first distance; a plurality of second gate structures in the second region, the second gate structures being spaced apart from each other by a second distance; a plurality of first spacers on sidewalls of the respective first gate structures; a dielectric layer on outer side walls of the respective first spacers; a plurality of second spacers on sidewalls of the respective second gate structures; and a plurality of third spacers on outer sidewalls of the respective second spacers, wherein a sum of a first thickness of a first of the first spacers and a second thickness of the dielectric layer that are on a sidewall of a first of the first gate structures is substantially equal to a sum of a third thickness of a first of the second spacers and a fourth thickness of a first of the third spacers that are on a sidewall of a first of the second gate structures.