CAPACITOR STRUCTURE AND METHOD FOR FORMING THE SAME

摘要

A capacitor structure includes first and second interdigitated conductive elements formed over different portions of a semiconductor substrate, and a dielectric layer formed between the first and second interdigitated conductive elements. The first interdigitated conductive element that is formed includes a first base portion and a plurality of first protrusion portions. The second interdigitated conductive element includes a second base portion and a plurality of second protrusion portions. The second protrusion portions of the second interdigitated conductive element are interleaved with the first protrusion portions of the first interdigitated conductive element.

主权项

1. A capacitor structure, comprising:
a semiconductor structure; a first interdigitated conductive element formed over a portion of the semiconductor structure, comprising:
a first base portion; anda plurality of first protrusion portions, each having a first end connected with the first base portion and a second end not connected with the first base portion; a second interdigitated conductive element formed over another portion of the semiconductor substrate, comprising:
a second base portion; anda plurality of second protrusion portions, each having a third end connected with the second base portion and a fourth end not connected with the second base portion, and the plurality of second protrusion portions of the second interdigitated conductive element are interleaved with the plurality of first protrusion portions of the first interdigitated conductive element; and a dielectric layer formed between the first and second interdigitated conductive elements.