| 摘要 |
PURPOSE:To make an amorphous or polycrystalline thin film into single crystal easily by forming a strip shaped coating of high melting point metal having a smaller width than a energy beam, on an amorphous or polycrystalline thin film and irradiating those with an energy beam. CONSTITUTION:A thin film single crystal is formed by fusing and recrystallizing an amorphous and polycrystalline thin film 6 by annealing with an energy beam. At the time, a strip form coating 8 of high melting point having a smaller width than the energy beam is formed on an insulating film 7 on a thin film 6 and the part of coating 8 is irradiated with the electron beam. Then the thin film 6 is heated by the electron beam. However, under the coating 8, as an electron reflectance and a prevention performance of the coating 8 are high, the energy of the electron beam reduces by reflection 8 and is absorbed wholly in the coating 8, resulting in an increase in temperature of the coating 8 itself. Accordingly, the coating 8 restrains an increase in temperature of the thin film 6 and offers the nucleus generating position suitable for occurrence of the growth of single crystal.
|
