| 摘要 |
PURPOSE:To pattern a poly Si layer correctly by a method wherein a phosphide glass layer formed by means of diffusing phosphorus on a poly Si film is removed by fluoride base etching solution and then processed to make the surface of exposed Si film hydrophilic. CONSTITUTION:Phosphorus is diffused on a poly Si film formed on a semiconductor substrate. Firstly a phosphide glass layer formed on the surface is removed by fluoride base etching solution. Secondly the surface of exposed poly Si film is immersed in nitride solution. When the surface of poly Si is oxidized to form a thin oxide film, the surface formed of sinal group is made hydrophilic. Besides, the surface of poly Si layer may be immersed in hydrogen peroxide solution substituted for nitride solution to make the surface hydrophilic. Through these procedures, the yield of semiconductor production may be improved since poly Si film may be patterned correctly.
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