VAPOR GROWTH DEVICE

摘要

PURPOSE:To provide a titled device which permits the thorough discharge of the resulted product of reaction in a vapor phase to the outside of the system by the constitution in which the reactive gas heated to about the surface temp. of a material to be treated and an inert gas covering the outside thereof are passed along the surface of said material to be irradiated with UV rays. CONSTITUTION:The reactive gas is passed along the surface of a wafer 22 kept at a prescribed temp. on a hot plate 20 in the direction parallel therewith and is discharged from a discharge pipe 36 in a vapor growth device which grows a film on the wafer 22 surface by passing the reactive gas on the surface of the wafer 22 and irradiating the UV rays from an UV ray irradiating lamp 50. Gaseous N2 is passed by a gaseous N2 supply nozzle 38 and is discharged from a discharge pipe 44 to form an inert gaseous curtain to cover the outside of the above-mentioned reactive gaseous flow. Both reactive gas and gaseous N2 are preliminarily heated to the temp. approximately equal to the temp. of the wafer 22 by heating coils 34, 42. The resulted product of reaction in the vapor phase is thus discharged together with the gaseous flow and the generation of particles is thoroughly prevented.