| 摘要 |
PURPOSE:To obtain the titled device capable of forming a film at high speed and capable of increasing the availability of a target by providing a magnetic circuit for generating magnetic flux along the moving direction of the microwave which is introduced from an opening provided to the target and a cathode and magnetic flux to cover the target. CONSTITUTION:A voltage is impressed in a vacuum vessel 6 by an electric power source 9 between target 1 placed on a cathode 4 and an anode 7 in a sputtering device. In the device, an opening of a plasma generating chamber 11 is provided at the central part 10 between said target 1 and the cathode 4, microwave from a microwave generating source 16 is introduced from waveguides 12 and 15 connected to the opening to generate plasma 25, and sputtering is carried out. In the device, magnetic devices 17 and 18 are further furnished to generate magnetic flux 22 along the moving direction of the microwave and arcuate magnetic flux 23 to cover the target 1. Consequently, the plasma 25 can be highly densified almost over the whole surface of the target 1, and sputtering is efficiently carried out at high speed over the whole surface of the target 1. |
