发明名称 SEMICONDUCTOR PHOTODETECTOR
摘要 PURPOSE:To eliminate the spike noise completely by operating a pair of outputs by a photodetector where a bipolar scanning circuit part whose noise is smaller than that of a MOS photodetector and a photoelectric converting part are combined. CONSTITUTION:One terminals of signal reading lateral PNP switching transistors TRs S1...Sn are connected to a signal output line 2, and the other terminals are connected to photodiodes PD1...PDn. One terminals of noise reading lateral PNP switching TRs NS1...NSn are connected to a noise output line 3, and the other terminals are connected to dummy diodes DPD1...DPDn. If noise reading lateral PNP switching TRs including dummy diodes are constituted similarly to and near signal reading lateral PNP switching TRs, noise components are equalized approximately, and the spike noise is cancelled completely.
申请公布号 JPS61147664(A) 申请公布日期 1986.07.05
申请号 JP19840270385 申请日期 1984.12.21
申请人 HAMAMATSU PHOTONICS KK 发明人 YAMAMOTO AKINAGA;ASAI HITOSHI;MURAMATSU MASAHARU;KAGEYAMA MITSUAKI
分类号 H01L27/14;H01L27/146;H04N1/028;H04N5/335;H04N5/357;H04N5/369 主分类号 H01L27/14
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