| 摘要 |
PURPOSE:To make clear by a method wherein the reduced image of a mask pattern is baked by exposing a wafer coated with an ultraviolet-sensitive agent to radiated light whose wavelength at the maximum peak is specific, via lens system and photo mask of high permeability to this light. CONSTITUTION:A xenon-mercury vapor discharge lamp 1 radiating light whose wavelength at the maximum peak is 365nm is continuously lighted on a fixed power. Then, exposure is carried out by irradiating a micro area of a semiconductor wafer 7 for a fixed time via photo mask 6 with the light radiated by opening and closing an exposure amount control shutter 8. The control of exposure amount is made to fit to a necessary prescribed value by setting the time of the opening of the shutter 8. The semiconductor wafer 7 is subjected to exposure by stepwise moving a micro area P to the x-direction and y-direction. A time of exposure is finished with the opening and closing of the shutter 8, and a pattern is baked at a micro area P. Then, exposures are repeated by stepwise moving the conductor wafer 7 during the period of the closure of the shutter 8.
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