| 摘要 |
PURPOSE:To contrive to clean the surface of a compound semiconductor and to contrive to improve the crystallizability thereof by a method wherein a heat treatment is applied to the compound semiconductor at temperatures higher than the prescribed temperature in an atmosphere of hydrogen and a vapor-phase etching is applied to the compound semiconductor. CONSTITUTION:A heat treatment is applied to a GaAs compound semiconductor for 30min in mixed air current, wherein arsine (AsH3) is mixed in hydrogen (H2) in a trace amount, then a vapor-phase etching is applied to the GaAs compound semiconductor at 800 deg.C or more. Here, the reason for mixing the AsH3 in the H2 is because the vapor pressure of the elements of the V Group is higher compared to that of the elements of the III Group in III-V compound semiconductors, such as the GaAs compound semiconductor, so when a longtime heat treatment is performed at high temperatures, a phenomenon that the As, one of the elements of the V Group, is excessively dissociated and thermal pitches generate on the surface of the compound semiconductor is prevented from generating. When a vapor-phase etching is performed at temperatures higher than 800 deg.C or more, an etching amount of about 30Angstrom or more can be obtained. By this way, the attachments on the surface of the GaAs compound semiconductor are removed and the crystallizability of the GaAs compound semiconductor can be improved. Moreover, as an etching is performed in the epitaxial growth device, an epitaxial growth can be performed without taking out the substrate outside the device after the etching. As a result, the substrate is prevented from being subjected to oxidation and so forth. This etching method is more efficient.
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