| 摘要 |
PURPOSE:To obtain a semiconductor laser with a direct modulation frequency of as high as several tens of GHz by a method wherein a resonance tunnel phenomenon is employed for injection of electrons and recombination of the injected electrons and two-dimensional positive hole gas formed in an active layer is utilized to induce a laser oscillation. CONSTITUTION:As a resonance tunnel diode structure, employing a super-lattice, is utilized for injection of electrons, high frequency modulation of electron injection current can be achieved only by modulating a vary low voltage. Moreover, recombination of the electrons injected by the tunnel phenomenon and two-dimensional positive hole gas 14 (2DHG) formed in the potential well in an active layer is accelerated by an electric field applied to the potential well so that the life taus of the injected carriers can be made to be several tens of picoseconds. Therefore, a semiconductor laser device with a direct modulation frequency of as high as several tens of GHz can be provided.
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