| 摘要 |
PURPOSE:To decrease the amount of wastes and to improve the yield and the quality of products, by forming a resist film pattern such that no resist film is provided on the periphery of a wafer, and subjecting the wafer to various treatments such as etching or the like while protecting it with the resist film. CONSTITUTION:A wafer 10 is conveyed from a casette 11 to a loading stage 13. A light beam with a diameter of 10mm is applied along the periphery of the wafer arranged on the loading stage 13 while the stage 13 is being rotated, so that the peripheral region of the wafer with a width of about 10mm is exposed. The applied light beam is conducted through an optical fiber 16 from a light source 12L of a stepper 12. The wafer is then conveyed to an exposing stage 14 where it is exposed for the formation of a pattern by the stepper 12. The wafer is developed in the next state and thus is provided with a resist film pattern 20. According to this method, the resist film will not be peeled off if the periphery of the wafer is contacted with various devices and consequently possible wastes can be decreased.
|
