| 摘要 |
PURPOSE:To perform an adding operation of high density of Si by a method wherein, when Si is added while a III-V compound semiconductor is formed into a film by performing an MOCVD method, a light of sufficient wavelength, which is necessary for the decomposition of gas containing Si, is made to irradiate on the surface of a substrate or the gas located directly above the substrate while said film is being grown. CONSTITUTION:Using trimethylgallium and arsine as raw material, silane is introduced (1) into a reaction tube 2 as doping gas. When Si is doped on the GaAs substrate 3 located on the high frequency-heated (5) carbon pedestal 4 which is heated up, the beam of light of heavy hydrogen lamp 8 is projected on the surface of the substrate 3 or the vapor phase directly above the substrate through a window 7. As a result, silane is decomposed, the Si element to be brought into the GaAs growing film is increased, and the density of carrier is not reduced even when the temperature of the substrate drops.
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