| 摘要 |
PURPOSE:To improve the gate turn-off characteristic of GTO without concentration of main current and gate current on basic portions by a construction wherein a pattern of the distribution of current density being the highest in the respective central portions of two finger elements. CONSTITUTION:The device has a structure of drawn-out electrode metal in which a cathode electrode metal 12 and a gate electrode metal 13 are so drawn out from the substantially-central positions of the respective cathode and gate regions 14 and 16 as to be symmetrical substantially to each other. A current density is the highest at the central position between E-F points of a finger element 12a of the cathode electrode metal 12 and also at the central position between G-H points of a finger element 13a of the gate electrode metal 13, and thus patterns of the distribution of the current density of the two are in accord with each other. Thereby the current breakdown due to a gate turn-off current (ITGQ) is prevented effectively, and the gate turn-off characteristic can be improved effectively.
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