| 摘要 |
PURPOSE:To monitor the growth rate of a semiconductor thin-film simply during growth at low cost by measuring self-bias by using a voltmeter for high frequency mounted to an exciting electrode for a high-frequency plasma chemical vapor growth device. CONSTITUTION:Self-bias applied to a cathode electrode 6 changes by the shape of a reaction vessel 1, the shapes of anode and cathode electrodes 8, 6 and the states of the surfaces of the electrodes 8, 6. Consequently, the self-bias is monitored, thus expecting a stable vapor growth method. Self-bias introduces a circuit 13, in which a coil for chopping high frequency, a resistor R and a capacitor C are combined, between a matching box 3, through which high-frequency power fed from a power supply 2 is passed, and the exciting electrode 6. Accordingly, the growth rate of a semiconductor thin-film is measured with a voltmeter V from both ends of a series resistor R.
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