发明名称 GASEOUS PHASE REACTOR
摘要 PURPOSE:To bring a reactive gas into uniform contact with a wafer on a circular wafer imposing base and to form an excellent film by forming a reaction chamber to an approximately square cross section, providing the imposing base to the center thereof and disposing wafer handling mechanisms to the respective corners of the reaction chamber in a manner that the mechanisms can move vertically. CONSTITUTION:The reaction chamber 100 of a gaseous phase reactor is formed to the square cross section and the circular wafer imposing base 110 is disposed to approximately the central part of the reaction chamber 100. The wafer handling mechanisms 120 are respectively disposed to the respective corners of the reaction chamber 100 and a shutter ring 130 is disposed adjacently to the outside peripheral part of the wafer imposing base 110. Each wafer handling mechanism 120 consists of a wafer receiving claw 122, an arm 124 to support the receiving claw 122, and a horizontal bar 126 to support the arm 124. The wafer handling mechanisms 120 and the shutter ring 130 are vertically movably constituted. The flow pattern of the reactive gas fed from the upper part of the reaction chamber 100 is thereby made uniform and the reactive gas contacts uniformly with the wafer on the imposing base 110.
申请公布号 JPS62214177(A) 申请公布日期 1987.09.19
申请号 JP19860055749 申请日期 1986.03.13
申请人 HITACHI ELECTRONICS ENG CO LTD 发明人 AIKAWA HIROSHI;NAGASAKI KEIICHI;HACHITANI MASAYUKI
分类号 H01L21/205;C23C16/44;C23C16/458;C23C16/50;H01L21/02;H01L21/31;H01L21/677 主分类号 H01L21/205
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