| 摘要 |
PURPOSE:To improve the characteristics and yield of a device formed onto a recrystallized silicon-on-insulator film (an SOI film) by mixing oxygen contained in the surface of a layer insulating film to the SOI film and conducting gettering by utilizing the mixed oxygen. CONSTITUTION:A polysilicon film 23 is formed onto an SiO2 film shaped onto the surface of an silicon wafer 21 as a layer insulating film 22, the polysilicon film 23 is irradiated by heat rays and melted and recrystallized and an silicon single crystal film 24 is formed, and an intrinsic-gettering method (an IG method) is conducted through heat treatment. There are a large number of oxygen on the surface of the SiO2 film 22 on the surface of the silicon wafer 21, and oxygen gradually mixes into the silicon single crystal film 24 when the polysilicon film 23 is irradiated by heat rays and melted and recrystallized. Accordingly, since heat treatment is performed by utilizing oxygen, a fault layer region 24b and a fault-free layer region 24a on the surface side are shaped in the silicon single crystal film 24, thus improving the characteristics of a device formed onto an SOI film, then also enhancing yield.
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