发明名称 AMORPHOUS SILICON GOLD THIN-FILM CONDUCTOR
摘要 PURPOSE:To improve the conductivity of an amorphous silicon gold thin-film conductor obtained by thermally treating Au and adding Au into an amorphous silicon thin-film. CONSTITUTION:A sample consisting of an insulating substrate 1, an amorphous thin-film 2 deposited on the substrate 1 and an Au thin-film 3 evaporated onto the thin-film 2 is thermally treated for 60min at 700 deg.C in a nitrogen atmosphere by using an electric furnace, thus increasing conductivity by decuple or more. That is, it is considered that Au is added into the amorphous silicon thin-film through heat treatment and conductivity is enhanced by the increase of carrier concentration. When the amorphous silicon-metallic film is used, a high-frequency power sensor, an infrared sensor, a temperature sensor, etc. including a thermocouple having high performance can be constituted.
申请公布号 JPS62222682(A) 申请公布日期 1987.09.30
申请号 JP19860064695 申请日期 1986.03.25
申请人 ANRITSU CORP 发明人 TENMA TAKESHI;KOTADO SETSUO
分类号 H01L35/14;H01L29/84 主分类号 H01L35/14
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