| 摘要 |
PURPOSE:To etch without Si residue, readhesion, and deposition by a method wherein an inter-layer insulation film of poluimide system resin containing Si gas etched with the gas where fluorine system gas without containing carbon and O2 are mixed. CONSTITUTION:An Al wiring 1 on the oxide film 2 formed on a semiconductor substrate is coated with unbardened polyimide system resin containing Si and heat-treated at a high temperature to form an inter-layer insulation film 3 consisting of polyimide containing Si. After that, Ti is spattered with 3000Angstrom to form an intermediate layer 4. After that an upper resist 5 is patterned, and an intermediate layer 4 is etched. After that, a polyimide film containing Si is etched with the intermediate layer 4 and the resist 5 as a mask using O2+SF6 gas 6. By performing the reactive ion etching for the polyimide resin film containing Si with power density of less than 0.6W/cm<2> using fluorine gas with and without containing O2 and C, it is possible to achieve etching without Si residue, readhesion and deposition.
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