发明名称 LIQUID-PHASE EPITAXIAL GROWTH APPARATUS
摘要 PURPOSE:To prevent evaporation of components of a substrate protection plate and deterioration of the protection plate so as to enable it to be reused, by covering the substrate protection plate with a protection plate cover simultaneously with moving a slider for starting growth of crystals, for the purpose preventing the substrate protection plate from being contacted directly with high temperature gas. CONSTITUTION:In a liquid-phase epitaxy apparatus, a substrate 3 to be treated and a protection plate cover 5 of carbon are carried on a boat 1 of carbon, and a slider 2 is disposed thereon. A substrate protection plate 4 and growing melt 6 are inserted through holes formed in the slider 2. When inserted, the protection plate 4 is supported by a projection provided on the inner wall bottom and placed over the substrate 3. After the protection plate 4 and the growing melt 6 are put in the holes of the slider 2, they are covered by a cover of carbon so as to prevent evaporation of component elements thereof and deterioration of the protection plate 4.
申请公布号 JPS63129617(A) 申请公布日期 1988.06.02
申请号 JP19860276961 申请日期 1986.11.20
申请人 FUJITSU LTD 发明人 KATO TAKESHI
分类号 H01L21/208 主分类号 H01L21/208
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