| 摘要 |
PURPOSE:To obtain a negative resistance element capable of an adequate voltage margin by a method wherein a quantum well is of a multiple quantum well structure. CONSTITUTION:On a semiconductor substrate 11 of the first conductivity type, a first semiconductor layer 12 of the first conductivity type, quantum well 13 consisting of a second semiconductor layer to serve as a barrier layer and laminate of third semiconductor layers, and fourth semiconductor layer 14 of the second conductivity type are built into a mesa, in that order. The quantum well 13 in a resonance tunnel type negative resistance element thus constructed is of a multiple quantum well structure. For example, on an n-type InP substrate 11, provided with an ohmic electrode 17 on its rear side, and a quantum well 13, which is a laminate of an undoped InAlAs and InGaAs respectively serving as a barrier layer and well layer, are formed, with an n-type InAlAs layer 12 between. On the quantum well 13 of a multiple quantum well structure, further, a p-type InGaAs layer 15 for ohmic contact and contact electrode 10 are built, through the intermediary of a p-type InAlAs layer 14. All the layers are subjected to a mesa-etching process.
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