| 摘要 |
PURPOSE:To contrive to drop the resistance of a grounding conductor by a method wherein high-melting point metal layers are laminated on a diffused layer to form the grounding conductor. CONSTITUTION:A first layer high-temperature oxide film 5 is etched with a buffered hydrofluoric acid using a pattern formed by a lithography as a mask, then an N<+> diffused layer exposed by the etching is reduced by a decompression CVD method, wherein tungsten hexafluoride WF6 and hydrogen are used. At this time, tungsten is deposited on the exposed N<+> diffused layer, is continuously deposited on a part, whereon the tungsten is deposited one time, and is almost not deposited on the oxide film 5. As a result, a recessed part is buried in. After that, a high-temperature oxide film 14 is formed and a second high- temperature oxide film 8 is formed on this oxide film 14. Thereby, the resistance of a grounding conductor is dropped.
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