发明名称 FORMING METHOD FOR INITIAL STRIPE MAGNETIC DOMAIN IN VERTICAL BLOCH LINE MEMORY
摘要 PURPOSE:To surely form the strip magnetic domain of S=0 having the inversion of VBL at its both ends in an initial state, when the stripe magnetic domain is formed by extending a magnetic bubble by preventing the movement of the VBL (vertical Bloch line) through the use of a barrier means. CONSTITUTION:While the movement of the VBL is prevented by generating locally a magnetic field with a reverse direction of an in-plane magnetic field Hip in the barrier means 4 by letting a current (i) flow to the barrier means 4, the magnetic bubble is extended, and the stripe magnetic domain SD, in which the VBL does not exist at least in the extended part of the magnetic bubble, is formed. Neighboring domain walls of the neighboring magnetic domain SD1 are made to approach in the outside of respective fixing means 21, 22, 23... by giving an initial magnetic field the inversion of HB, and the said neighboring domain walls are chipping-united by the first and the second chopping means 5 and 6. Thus, the S=0 stripe magnetic domain NSD, which has the inversion of VBL at the chopping united part of the both ends, is due to be formed, surrounding the circumference of the respective fixing means 21, 22, 23....
申请公布号 JPS63209091(A) 申请公布日期 1988.08.30
申请号 JP19870043435 申请日期 1987.02.26
申请人 SONY CORP 发明人 NAKADA SATOSHI
分类号 G11C11/14;G11C19/08 主分类号 G11C11/14
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