| 摘要 |
PURPOSE:To enable the fine pattern etching in even piled films of chromium, gold, and the like, by using an aqueous solution which is formed by adding a specific quantity of ammonia solution in an aqueous solution of secondary cerium ammonium nitrate or secondary cerium ammonium sulfate. CONSTITUTION:When a required part on a chromium film or piled films of chromium and other metals is masked to perform selective etching removal of the chromium film exclusive of the masked region, a solution, whose mixing ratio is formed by adding 20ml to 200ml of 25% aqueous ammonia in an aqueous solution of 100-500g of secondary cerium ammonium nitrate or secondary cerium ammonium sulfate per 1l water, is used. Overetching can be reduced by using the solution formed in this mixing ratio. A fine pattern can be formed in even the piled films which are made of chromium, gold, etc., and liable to be subjected to overetching.
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