| 摘要 |
PURPOSE:To prevent the generation of an air bubble due to a reaction by a method wherein, prior to a process to harden a photoresist by irradiation of light, the process is executed by irradiation of the light of the weak intensity which does not harden the photoresist. CONSTITUTION:For a photoresist 8 after a developing operation during a photolithographic process to manufacture a semiconductor device, the photoresist 8 is irradiated with the light of the first light intensity (e.g. several mW/ cm<2>-several tens of mW/cm<2>) which is weaker than the light intensity to harden the photoresist 8. Then, the photoresist 8 is irradiated with the light of the second light intensity (e.g. several hundreds of mW/cm<2>) which can harden the photoresist 8. By this setup, a residual oxide is exposed to light gradually; it is possible to prevent the generation of N2 gas due to a reaction with hexamethyldisilazane (HMDS) used as a close-adhesion reinforcing agent. |
