| 摘要 |
PURPOSE:To inhibit stress changes and stress concentration near a gate and the edge of an insulating film for a Schottky FET, etc., by applying the insulating film onto a semiconductor operating layer near a gate electrode. CONSTITUTION:When an insulating film 6 consisting of SiO2 is applied onto an operating layer near a Schottky gate 1 with the exception of the gate 1, stress changes and stress concentration near the gate and the edges of the insulating film are made smaller than there is the insulating film on the gate 1. Accordingly, the charge fluctuation of the operating layer is inhibited, thus preventing the generation of the alteration of the threshold of a Schottky FET, etc.
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