发明名称 CHARGED PARTICLE BEAM LITHOGRAPHY
摘要 PURPOSE:To improve the accuracy of directly written patterns extending over in X and Y directions while correcting any shifting errors of stage and slip of beams etc., by means of providing fields having respectively overlapping framed regions before writing patterns. CONSTITUTION:Before writing rectangular patterns, when the data inside the pattern from a magnetic disc 13 extend over multiple fields, the patterns are divided into two regions, i.e. the framed regions and the residual regions excluding the framed regions by a controller 7. The position, type of fields containing respectively divided patterns, initial positions and respective dimensions in X and Y directions are stored either in built-in memory or in an outer memory. When the divided and stored patterns are read out and fed to deflectors 5 and blanking deflectors 8 to be written, the electron beams from an electron gun 1 are focussed by focussing lenses 2, 3 to be directly written by the deflectors 5 on the specified position so that the accuracy of directly written patterns extending over in X and Y directions may be improved.
申请公布号 JPS63248129(A) 申请公布日期 1988.10.14
申请号 JP19870082690 申请日期 1987.04.03
申请人 JEOL LTD 发明人 YUASA TETSUO;KOSAKA YASUYUKI
分类号 H01L21/027;H01L21/30 主分类号 H01L21/027
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