发明名称 PLASMA TREATMENT APPARATUS
摘要 PURPOSE:To make it possible to conduct uniform treatment at high speed by a method wherein a gas flow passage, leading to a plasma generating chamber from a gas supply source, is constituted between a plurality of openings of a slit plate. CONSTITUTION:The slit plate 5, which is a part of a hollow resonator 1, having a plurality of slit-shaped apertures directing to a plasma-generating chamber 6, is provided and a gas-stream passage 9 communicating with the plasma- generating chamber 6 from a gas-feeding source is formed between a plurality of apertures of said slit plate 5. As a result, a shower of gas can be fed into the plasma-generating chamber without interruption the introducing path of microwaves, and the plasma can be generated in a stable manner using microwaves. Also, by connecting the hollow resonator 1 to an earthed potential, counter electrodes in parallel with the electrode on which the material to be treated is placed can be constituted, and the effect of ions and radical can be given to the objective substance to be treated by the propagation of energy of the microwaves through the slits. Consequently, the plasma treatment using high-speed and optimum ion energy can be conducted.
申请公布号 JPS63263725(A) 申请公布日期 1988.10.31
申请号 JP19870097525 申请日期 1987.04.22
申请人 HITACHI LTD 发明人 YAMAGUCHI YASUHIRO;OTSUBO TORU;TAKEUCHI NAOHIKO
分类号 H01L21/302;H01L21/205;H01L21/3065;H01L21/31 主分类号 H01L21/302
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