发明名称 Tailored reflecting diffractor for EUV lithographic system aberration measurement
摘要 A wavefront measurement system includes a source of electromagnetic radiation. An imaging system directs the electromagnetic radiation at an object plane that it uniformly illuminates. A first grating is positioned in the object plane to condition the radiation entering the input of a projection optic. A projection optical system projects an image of the first grating onto the focal plane. A second grating is positioned at the focal plane that receives a diffracted image of the source to form a shearing interferometer. A CCD detector receives the image of the first grating through the projection optical system and the second grating that forms a fringe pattern if there are aberrations in the projection optical system. Phaseshift readout of fringe pattern can be accomplished by stepping the first grating in a lateral direction and reading each frame with the CCD detector. The first grating includes a plurality of reflecting lines each formed by a plurality of reflecting dots. The first grating has a pitch that is ½ times the magnification of the projection system times the pitch of the second grating for achromatic operation.
申请公布号 US2004145714(A1) 申请公布日期 2004.07.29
申请号 US20040753557 申请日期 2004.01.09
申请人 ASML HOLDING, N.V. 发明人 POULTNEY SHERMAN K.
分类号 G01J9/02;G02B5/18;G03F7/20;(IPC1-7):G03B27/52 主分类号 G01J9/02
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